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| MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DY12H is a 600V (VCES), 100 Ampere Dual IGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.1500.01 1.57 1.34 1.22 Max. 0.90 0.85 0.79 0.71 Millimeters 94.0 80.00.25 40.0 34.0 31.0 Max. 23.0 21.5 20.0 18.0 Dimensions K L M N P Q R S Inches 0.67 0.63 0.51 0.47 0.28 0.256 Dia. 0.16 M5 Metric Millimeters 17.0 16.0 13.0 12.0 7.0 Dia. 6.5 4.0 M5 Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM100DY-12H -40 to 150 -40 to 125 600 20 100 200* 100 200* 400 1.47 ~ 1.96 1.96 ~ 2.94 190 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V IC = 100A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.1 2.15 300 - Max. 1.0 0.5 7.5 2.8** - - 2.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 100A, diE/dt = -200A/s IE = 100A, diE/dt = -200A/s VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3 VGE = 0, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.27 Max. 10 3.5 2 120 300 200 300 110 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.31 0.70 0.075 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C Tj = 25oC VGE = 20V 15 12 150 11 150 4 3 100 10 100 2 50 7 9 8 50 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 50 100 150 200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C IC = 200A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 101 Cies 6 IC = 100A 102 4 Coes 100 2 IC = 40A VGE = 0V Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) tf td(off) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 7 5 SWITCHING TIME, (ns) Tj = 125C 103 7 Tj = 25C 5 3 2 -di/dt = 200A/s 102 7 5 3 2 20 IC = 100A 16 3 2 VCC = 200V 12 102 7 5 3 2 td(on) 102 7 5 3 2 trr lrr 101 7 5 3 2 VCC = 300V 8 tr 101 0 10 VCC = 300V VGE = 15V RG = 6.3 2 3 5 7 102 4 2 3 5 7 101 101 0 10 2 3 5 7 101 2 3 5 7 102 100 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.31C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.7C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM100DY-12H
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